CQY36N(2005) Просмотр технического описания (PDF) - Vishay Semiconductors
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CQY36N Datasheet PDF : 6 Pages
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CQY36N
Vishay Semiconductors
GaAs Infrared Emitting Diode in Miniature (T-¾) Package
Description
CQY36N is a standard GaAs infrared emitting diode
in a miniature top view plastic package.
Its flat window provides a wide aperture making it
ideal for use with external optics.
The diode is case compatible to the BPW16N pho-
totransistor, allowing the user to assemble his own
optical interrupters.
Features
94 8638
• Suitable for pulse operation
• Standard T-¾ flat miniature package
• Wide angle of half intensity ϕ = ± 55 °
• Peak wavelength λp = 950 nm
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Forward current
Surge Forward Current
Power Dissipation
tp ≤ 100 µs
Junction Temperature
Storage Temperature Range
Soldering Temperature
t≤3s
Thermal Resistance Junction/
Ambient
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
IF = 50 mA, tp ≤ 20 ms
Breakdown Voltage
IR = 100 µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Symbol
Value
Unit
VR
5
V
IF
100
mA
IFSM
2
A
PV
170
mW
Tj
100
°C
Tstg
- 25 to + 100
°C
Tsd
245
°C
RthJA
450
K/W
Symbol
Min
Typ.
Max
Unit
VF
1.3
1.6
V
V(BR)
5
V
Cj
50
pF
Document Number 81001
Rev. 1.4, 08-Mar-05
www.vishay.com
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