IL4108 Просмотр технического описания (PDF) - Vishay Semiconductors
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Компоненты Описание
производитель
IL4108
Vishay Semiconductors
IL4108 Datasheet PDF : 10 Pages
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IL410/ IL4108
Vishay Semiconductors
Parameter
Test condition
Part
Critical rate of rise of off-state VD = 0.67 VDRM, TJ = 25 °C
voltage
VD = 0.67 VDRM, TJ = 80 °C
Critical rate of rise of voltage at VD = 0.67 VDRM,
current commutation
dI/dtcrq ≤ 15 A/ms, TJ = 25 °C
VD = 0.67 VDRM,
dI/dtcrq ≤ 15 A/ms, TJ = 80 °C
Critical rate of rise of on-state
Thermal resistance, junction to
ambient
Symbol
dV/dtcr
dV/dtcr
dV/dtcrq
dV/dtcrq
dI/dtcr
Rthja
Min
Typ.
10000
5000
10000
5000
8.0
150
Max
Unit
V/µs
V/µs
V/µs
V/µs
A/µs
°C/W
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Max
Critical rate of rise of coupled
input/output voltage
IT = 0 A, VRM = VDM = VD(RMS)
dVIO/dt
10000
Common mode coupling
capacitance
CCM
0.01
Capacitance (input-output)
f = 1.0 MHz, VIO = 0 V
CIO
0.8
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Unit
V/µs
pF
pF
Ω
Ω
Power Factor Considerations
A snubber isn’t needed to eliminate false operation of
the TRIAC driver because of the IL410/ IL4108’s high
static and commutating dV/dt with loads between 1.0
and 0.8 power factors. When inductive loads with
power factors less than 0.8 are being driven, include
a RC snubber or a single capacitor directly across the
device to damp the peak commutating dV/dt spike.
Normally a commutating dV/dt causes a turning-off
device to stay on due to the stored energy remaining
in the turning-off device.
But in the case of a zero voltage crossing optotriac,
the commutating dV/dt spikes can inhibit one half of
the TRIAC from turning on. If the spike potential
exceeds the inhibit voltage of the zero cross detection
circuit, half of the TRIAC will be held-off and not turn-
on. This hold-off condition can be eliminated by using
a snubber or capacitor placed directly across the
optotriac as shown in Figure 1. Note that the value of
the capacitor increases as a function of the load cur-
rent.
1
Cs(µF) = 0.0032 (µF)* 10^(0.0066IL (mA)
.1
Ta = 25°C, PF = 0.3
.01
IF = 2.0 mA
.001
0
iil410_01
50 100 150 200 250 300 350 400
IL - Load Current - mA(RMS)
Figure 1. Shunt Capacitance vs. Load Current
www.vishay.com
4
Document Number 83627
Rev. 1.4, 26-Apr-04
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