IL4108-X006 Просмотр технического описания (PDF) - Vishay Semiconductors
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Компоненты Описание
производитель
IL4108-X006
Vishay Semiconductors
IL4108-X006 Datasheet PDF : 10 Pages
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Parameter
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
Test condition
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
max. ≤ 10 sec. dip soldering
≥ 0.5 mm from case bottom
Symbol
RIO
RIO
Tstg
Tamb
Tsld
IL410/ IL4108
Vishay Semiconductors
Value
Unit
≥ 175
≥ 1012
Ω
≥ 1011
Ω
- 55 to + 150
°C
- 55 to + 100
°C
260
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Input capacitance
Thermal resistance, junction to
ambient
Test condition
IF = 10 mA
VR = 6.0 V
VF = 0 V, f = 1.0 MHz
Symbol
Min
VF
IR
CIN
Rthja
Typ.
1.16
0.1
25
750
Max
Unit
1.35
V
10
µA
pF
°C/W
Output
Parameter
Off-state voltage
Test condition
ID(RMS) = 70 µA
Repetitive peak off-state voltage IDRM = 100 µA
Off-state current
On-state voltage
On-state current
Surge (non-repetitive), on-state
current
Trigger current 1
Trigger current 2
Trigger current temp. gradient
VD = VDRM, Tamb = 100 °C,
IF = 0 mA
VD = VDRM, IF = Rated IFT
IT = 300 mA
PF = 1.0, VT(RMS) = 1.7 V
f = 50 Hz
VD = 5.0 V
VOP = 220 V, f = 50 Hz,
TJ = 100 °C, tpF > 10 ms
Inhibit voltage temp. gradient
Off-state current in inhibit state
Holding current
Latching current
Zero cross inhibit voltage
Turn-on time
Turn-off time
IF = IFT1, VDRM
VT = 2.2 V
IF = Rated IFT
VRM = VDM = VD(RMS)
PF = 1.0, IT = 300 mA
Document Number 83627
Rev. 1.4, 26-Apr-04
Part
IL410
IL4108
IL410
IL4108
Symbol
VD(RMS)
VD(RMS)
VDRM
VDRM
ID(RMS)1
Min
Typ.
Max
Unit
424
460
V
565
V
600
V
800
V
10
100
µA
ID(RMS)2
VTM
ITM
ITSM
IFT1
IFT2
200
µA
1.7
3.0
V
300
mA
3.0
A
2.0
mA
6.0
mA
∆IFT1/∆Tj
∆IFT2/∆Tj
∆VDINH/∆Tj
IDINH
IH
IL
VIH
ton
toff
7.0
14
µA/°C
7.0
14
µA/°C
-20
mV/°C
50
200
µA
65
500
µA
5.0
mA
15
25
V
35
µs
50
µs
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