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H30T90 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге
Компоненты Описание
производитель
H30T90
Infineon
Infineon Technologies Infineon
H30T90 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Soft Switching Series
IHW30N90T
q
1000ns
td(off)
1µs td(off)
100ns
td(on)
tf
tr
10ns
0A
10A 20A 30A 40A 50A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=15,
Dynamic test circuit in Figure E)
tf
100ns
td(on)
tr
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=15,
Dynamic test circuit in Figure E)
7V
6V
5V
max.
4V
typ.
3V
min.
2V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.3mA)
Power Semiconductors
6
Rev. 2.3 Nov 08

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