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HYM72V4015GS

4M × 72-Bit EDO-DRAM Module (ECC - Module)

Siemens AG 

HYM72V4005/15GS-50/-60

4M x 72-ECC EDO-Module

AC Characteristics (contd’ ) (note: 5,6,7,8)

TA = 0 to 70 °C,VCC = 3.3 ± 0.3 V

Parameter

Symbol

-50

min. max.

Output buffer turn-off delay from OE tOEZ

CAS delay time from Din

tDZC

Data to OE low delay

tDZO

CAS high to data delay

tCDD

OE high to data delay

tODD

–

18

0

–

0

–

15

–

15

–

-60

min. max.

–

20

0

–

0

–

18

–

18

–

Unit Note

ns 9,17

ns 18

ns 18

ns 9,19

ns 9,19

Write Cycle

Write command hold time

tWCH

Write command pulse width

tWP

Write command setup time

tWCS

Write command to RAS lead time

tRWL

Write command to CAS lead time

tCWL

Data setup time

tDS

Data hold time

tDH

13

–

15

–

ns 9

8

–

10

– ns

2

–

2

–

ns 11,20

18

–

20

–

ns 9

13

–

15

– ns

-2

–

-2

–

ns 10,21

13

–

15

–

ns 9,21

Read-Modify-Write Cycle

Read-write cycle time

tRWC

RAS to WE delay time

tRWD

CAS to WE delay time

tCWD

Column address to WE delay time

tAWD

OE command hold time

tOEH

118 – 143 – ns 9

66

–

77

–

ns 11,21

29

–

34

–

ns 11,21

41

–

49

–

ns 11,21

8

–

11

– ns 10

Hyper Page Mode (EDO) Cycle

Hyper page mode cycle time

CAS precharge time

Access time from CAS precharge

Output data hold time

RAS pulse width

CAS precharge to RAS Delay

OE setup time prior to CAS

tPC

tCP

tCPA

tCOH

tRAS

tRHCP

tOES

20

–

25

– ns

8

–

10

– ns

–

32

–

37 ns 9,13

3

–

3

–

ns 10

50 200k 60 200k ns

32

–

37

–

ns 9

5

–

5

– ns

Semiconductor Group

8

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