Q67100-Q2149 Просмотр технического описания (PDF) - Siemens AG
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Компоненты Описание
производитель
Q67100-Q2149 Datasheet PDF : 24 Pages
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HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min max min max min max
Output buffer turn-off delay from
tOFF
CAS
0 13 0 13 0 15 ns 12
Output buffer turn-off delay from OE tOEZ
Data to OE low delay
tDZO
CAS high to data delay
tCDD
OE high to data delay
tODD
0 13 0 13 0 15 ns 12
0 – 0 – 0 – ns 13
10 – 10 – 13 – ns 14
10 – 10 – 13 – ns 14
Write Cycle
Write command hold time
tWCH
Write command pulse width
tWP
Write command setup time
tWCS
Write command to RAS lead time tRWL
Write command to CAS lead time tCWL
Data setup time
tDS
Data hold time
tDH
Data to CAS low delay
tDZC
8–
8–
0–
13 –
13 –
0–
8–
0–
8–
8–
0–
13 –
13 –
0–
8–
0–
10 –
10 –
0–
15 –
15 –
0–
10 –
0–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
Read-modify-Write Cycle
Read-write cycle time
tRWC
RAS to WE delay time
tRWD
CAS to WE delay time
tCWD
Column address to WE delay time tAWD
OE command hold time
tOEH
118 –
64 –
27 –
39 –
10 –
122 –
69 –
27 –
39 –
10 –
138 –
77 –
32 –
47 –
13 –
ns
ns 15
ns 15
ns 15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
tHPC
CAS precharge time
tCP
Access time from CAS precharge tCPA
Output data hold time
tCOH
RAS pulse width in hyper page
tRAS
mode
RAS hold time from CAS precharge tRHCP
20 – 20 – 25 – ns
8 – 8 – 10 – ns
– 27 – 27 – 32 ns 7
5 – 5 – 5 – ns
50 200k 55 200k 60 200k ns
27 – 27 – 32 – ns
Semiconductor Group
8
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