Q67100-Q2149 Просмотр технического описания (PDF) - Siemens AG
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Q67100-Q2149 Datasheet PDF : 24 Pages
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HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................ 0 to + 70 °C
Storage temperature range..................................................................................... – 55 to + 150 °C
Input/output voltage ..................................................................................... – 1 to (VCC + 0.5, 4.6) V
Power supply voltage................................................................................................... – 1 to + 4.6 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
VIH
Input low voltage
VIL
LVTTL Output high voltage (IOUT = – 2.0 mA)
VOH
LVTTL Output low voltage (IOUT = 2 mA)
VOL
LVCMOS Output high voltage (IOUT = – 100 µA) VOH
LVCMOS Output low voltage (IOUT = 100 µA)
VOL
Input leakage current, any input
II(L)
(0 V < VIN < 7 V, all other inputs = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V < VOUT < VCC)
Average VCC supply current:
ICC1
-50 version
-55 version
-60 version
2.4
– 1.0
2.4
–
2.4
–
– 10
– 10
–
VCC + 0.5
0.8
–
0.4
–
0.4
10
10
125
120
105
Unit Notes
V1
V1
V1
V1
V1
V1
µA 1
µA 1
mA 2, 3, 4
Standby VCC supply current
(RAS = LCAS = UCAS = WE = VIH)
ICC2
–
Average VCC supply current during
RAS-only refresh cycles:
ICC3
–
-50 version
-55 version
-60 version
2
mA –
125
mA 2, 4
120
105
Semiconductor Group
5
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