Q67100-Q2039 Просмотр технического описания (PDF) - Siemens AG

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Компоненты Описание

производитель

Q67100-Q2039

4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

Siemens AG 

HYB 314100BJ/BJL-50/-60/-70

3.3V 4M x 1 DRAM

The HYB 314100BJ/BJL is the new generation dynamic RAM organized as 4 194 304 words by

1-bit. The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit

techniques to provide wide operation margins, both internally and for the system user. Multiplexed

address inputs permit the HYB 514100BJ/BJL to be packed in a standard plastic P-SOJ-26/20

package. This package size provides high system bit densities and is compatible with commonly

used automatic testing and insertion equipment. System oriented features include single + 3.3 V

(± 0.3 V) power supply, direct interfacing with high performance logic device families.

Ordering Information

Type

HYB 314100BJ-50

Ordering Code

Q67100-Q2035

HYB 314100BJ-60

Q67100-Q2037

HYB 314100BJ-70

Q67100-Q2039

HYB 314100BJL-50 on request

HYB 314100BJL-60 on request

HYB 314100BJL-70 on request

Package

P-SOJ-26/20-5

P-SOJ-26/20-5

P-SOJ-26/20-5

P-SOJ-26/20-5

P-SOJ-26/20-5

P-SOJ-26/20-5

Descriptions

3.3 V DRAM

(access time 50 ns)

3.3 V DRAM

(access time 60 ns)

3.3 V DRAM

(access time 70 ns)

3.3 V Low Power DRAM

(access time 50 ns)

3.3 V Low Power DRAM

(access time 60 ns)

3.3 V Low Power DRAM

(access time 70 ns)

Semiconductor Group

2

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