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HVB27WK Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание
производитель
HVB27WK
Renesas
Renesas Electronics Renesas
HVB27WK Datasheet PDF : 5 Pages
1 2 3 4 5
HVB27WK
Absolute Maximum Ratings *1
(Ta = 25°C)
Item
Symbol
Reverse voltage
VR
Junction temperature
Tj
Storage temperature
Tstg
Note: 1. Per one device.
Value
Unit
15
V
125
°C
–55 to +125
°C
Electrical Characteristics *3
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Reverse current
IR1
10
nA
VR = 9 V
IR2
100
VR = 9 V, Ta = 60°C
Capacitance
C1
52.0
62.0 pF
VR = 1 V, f = 1 MHz
C2
43.0
48.0
VR = 2 V, f = 1 MHz
C8
24.0
28.0
VR = 8 V, f = 1 MHz
Capacitance ratio n1
1.8
C1/C8
n2
1.7
C2/C8
Series resistance
rs
0.4
VR = 2 V, f = 100 MHz
Matching error
C/C*1
3.0 %
VR = 1 to 8 V, f = 1 MHz
Notes: 1. A set of HVB27WK is of uniform C-V characteristics.
Measure max. value and min. value of capacitance at each bias point of VR = 1 V through 8 V.
Calculate Matching Error,
(Cmax – Cmin)
C/C =
Cmin
× 100 (%)
2. Each group shall uniform a multiple of 4 diodes.
3. Per one device.
Rev.1.00, Sep.18.2003, page 2 of 4

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