76645P Просмотр технического описания (PDF) - Fairchild Semiconductor
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76645P Datasheet PDF : 10 Pages
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HUF76645P3, HUF76645S3S
Typical Performance Curves (Continued)
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
1.2
ID = 250µA
1.1
1.0
0.4
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
10000
1000
CISS = CGS + CGD
COSS ≅ CDS + CGD
CRSS = CGD
100 VGS = 0V, f = 1MHz
70
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0.9
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 50V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
ID = 75A
ID = 50A
ID = 20A
0
0
30
60
90
120
150
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
1200
VGS = 4.5V, VDD = 50V, ID = 62A
1000
tr
800
600
400
200
0
0
tf
td(OFF)
td(ON)
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
1200
1000
VGS = 10V, VDD = 50V, ID = 75A
800
td(OFF)
600
400
200
0
0
tf
tr
td(ON)
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUF76645P3, HUF76645S3S Rev. B
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