HUF75852G3 Просмотр технического описания (PDF) - Fairchild Semiconductor
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HUF75852G3 Datasheet PDF : 10 Pages
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HUF75852G3
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 140V, VGS = 0V
VDS = 135V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 75A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-247
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 75V, ID = 75A
VGS = 10V,
RGS = 2.0Ω
(Figures 18, 19)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 75V,
ID = 75A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
ISD = 75A
ISD = 35A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
©2001 Fairchild Semiconductor Corporation
MIN TYP MAX UNITS
150
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100 nA
2
-
4
V
-
0.013 0.016 ¾
-
-
0.30 oC/W
-
-
30
oC/W
-
-
260
ns
-
22
-
ns
-
151
-
ns
-
82
-
ns
-
107
-
ns
-
-
285
ns
-
400 480
nC
-
215 260
nC
-
15
17.5
nC
-
25
-
nC
-
66
-
nC
-
7690
-
pF
-
1650
-
pF
-
535
-
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
-
-
260
ns
-
-
1830 nC
HUF75852G3 Rev. B
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