HLB120A Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HLB120A Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2002.01.31
Page No. : 1/3
HLB120A
NPN Triple Diffused Planar Type High Voltage Transistors
Description
The HLB120A is a medium power transistor designed for use in
switching applications.
Features
• High Breakdown Voltage
• Low Collector Saturation Voltage
• Fast Switching Speed
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
Total Power Dissipation (Tc=25°C) ....................................................................................... 7 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 600 V
VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current (DC) ............................................................................................... 100 mA
IC Collector Current (Pulse) ........................................................................................... 200 mA
IB Base Current (DC) ....................................................................................................... 20 mA
IB Base Current (Pulse).................................................................................................... 40 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max
Unit
Test Conditions
BVCBO
600
-
-
V IC=100uA, IE=0
BVCEO
400
-
-
V IC=10mA, IB=0
BVEBO
6
-
-
V IE=10uA,, IC=0
ICBO
-
-
10
uA VCB=550V
ICEO
-
-
10
uA VCE=400V, IB=0
IEBO
-
-
10
uA VEB=6V, IC=0
*VCE(sat)1
-
-
400
mV IC=50mA, IB=10mA
*VCE(sat)2
-
-
750
mV IC=100mA, IB=20mA
*VBE(sat)
-
-
1
V IC=50mA, IB=10mA
*hFE1
8
-
-
VCE=10V, IC=10mA
*hFE2
10
-
36
VCE=10V, IC=50mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HLB120A
HSMC Product Specification
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