HGT1S12N60C3 Просмотр технического описания (PDF) - Harris Semiconductor
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HGT1S12N60C3 Datasheet PDF : 6 Pages
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HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
Typical Performance Curves
80
DUTY CYCLE <0.5%, VCE = 10V
70 PULSE DURATION = 250µs
60
50
TC = 150oC
40
30
TC = 25oC
TC = -40oC
20
10
0
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
80
70
VGE = 15.0V
12.0V
60
50
10.0V
40
30
9.0V
20
8.5V
8.0V
10
7.5V
0
7.0V
0
2
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
80
PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 10V
60
50
40
TC = -40oC
30
TC = 150oC
20
TC = 25oC
10
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
80
PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
60
50
TC = 25oC
40
TC = 150oC
30
20
10
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
25
VGE = 15V
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
20
140
VCE = 360V, RGE = 25Ω, TJ = 125oC
120
ISC
15
100
80
10
60
40
tSC
5
20
10
11
12
13
14
15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-31
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