HGT1S12N60C3 Просмотр технического описания (PDF) - Harris Semiconductor
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HGT1S12N60C3 Datasheet PDF : 6 Pages
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HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
HGTP12N60C3, HGT1S12N60C3,
HGT1S12N60C3S
600
24
12
96
±20
±30
24A at 600V
104
0.83
100
-40 to 150
260
4
13
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
BVECS
ICES
VCE(SAT)
VGE(TH)
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA,
VCE = VGE
TC = 25oC
24
30
-
V
-
-
250
µA
-
-
1.0
mA
-
1.65
2.0
V
-
1.85
2.2
V
3.0
5.0
6.0
V
IGES
SSOA
VGE = ±20V
TJ = 150oC
RG = 25Ω
VGE = 15V
L = 100µH
-
VCE(PK) = 480V 80
VCE(PK) = 600V 24
-
±100
nA
-
-
A
-
-
A
Gate-Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
-
7.6
-
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES VGE = 20V
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
-
48
55
nC
-
62
71
nC
-
14
-
ns
-
16
-
ns
-
270
400
ns
-
210
275
ns
Turn-On Energy
EON
-
380
-
µJ
Turn-Off Energy (Note 3)
Thermal Resistance
EOFF
RθJC
-
900
-
µJ
-
-
1.2
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were
tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the
true total Turn-Off Energy Loss. Turn-On losses include diode losses.
3-30
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