HGTG40N60B3 Просмотр технического описания (PDF) - Harris Semiconductor
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HGTG40N60B3 Datasheet PDF : 6 Pages
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HGTG40N60B3
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
200
180
160
140
TC = +150oC
120
100
TC = +25oC
80
60
TC = -40oC
40
20
0
0
2
4
6
8
10
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
100
90
DIE LIMIT
80
70
VGE = 15V
60 PACKAGE LIMIT
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
200
180
VGE = 15V
12V
10V
160
9.5V
140
120
9V
100
80
8.5V
60
8.0V
40
7.5V
20
7.0V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VGE = 15V
200
150
TC = -40oC
TC = +25oC
100
TC = +150oC
50
0
0
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FREQUENCY = 1MHz
14
12
CISS
10
8
6
4
COSS
2
CRSS
0
0
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
IG(REF) = 4.06mA, RL = 7.5Ω, TC = +25oC
600
20
450
BVCE = 600V
15
300
10
BVCE = 400V
150
5
BVCE = 200V
0
0
0
50
100
150
200
250
QG, GATE CHARGE (nC)
FIGURE 6. GATE CHARGE WAVEFORMS
9-5
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