HGTG40N60B3 Просмотр технического описания (PDF) - Harris Semiconductor
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HGTG40N60B3 Datasheet PDF : 6 Pages
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Specifications HGTG40N60B3
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Latching Current
BVCES
ICE = 250µA, VGE = 0V
600
-
-
V
ICES
VCE = BVCES
TJ = +25oC
-
-
250
A
VCE = BVCES
TJ = +150oC
-
-
7.5
mA
VCE(SAT)
ICE = 40A
VGE = 15V
TJ = +25oC
-
1.4
2.0
V
TJ = +150oC
-
1.5
2.3
V
VGE(TH)
ICE = 250A,
VCE = VGE
TJ = +25oC
3.0
5
6.0
V
IGES
IL
VGE = ±20V
TJ = +150oC
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 45µH
-
-
±300
nA
160
-
-
A
Gate-Emitter Plateau Voltage
VGEP
ICE = 40A, VCE = 0.5 BVCES
-
8.0
-
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
ICE = 40A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
TJ = +150oC
ICE = 40A
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 100µH
-
240
320
nC
-
350
450
nC
-
50
-
ns
-
40
-
ns
-
350
435
ns
-
160
200
ns
Turn-On Energy
EON
-
1400
-
J
Turn-Off Energy (Note 1)
Thermal Resistance
EOFF
RθJC
-
3300
-
J
-
-
0.43 oC/W
NOTE:
1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
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9-4
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