HGTG18N120BN Просмотр технического описания (PDF) - Fairchild Semiconductor
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HGTG18N120BN Datasheet PDF : 8 Pages
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HGTG18N120BN
Typical Performance Curves Unless Otherwise Specified (Continued)
350
RG = 3Ω, L = 1mH, VCE = 960V
300
VGE = 12V, VGE = 15V, TJ = 150oC
250
200
150
VGE = 12V, VGE = 15V, TJ = 25oC
100
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 3Ω, L = 1mH, VCE = 960V
225
200
175
TJ = 150oC, VGE = 12V OR 15V
150
125
100
75
TJ = 25oC, VGE = 12V OR 15V
50
25
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
200
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
150
100
TC = 25oC
50
TC = 150oC
TC = -55oC
0
6
7
8
9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
6
FREQUENCY = 1MHz
5
CIES
4
3
2
CRES
1
COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
©2001 Fairchild Semiconductor Corporation
20 IG(REF) = 2mA, RL = 33.3Ω, TC = 25oC
15
VCE = 1200V VCE = 800V
10
VCE = 400V
5
0
0
50
100
150
200
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
30
DUTY CYCLE < 0.5%, TC = 110oC
25 PULSE DURATION = 250µs
VGE = 15V OR 12V
20
VGE = 10V
15
10
5
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG18N120BN Rev. B
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