HGTG18N120BN Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
HGTG18N120BN Datasheet PDF : 8 Pages
| |||
HGTG18N120BN
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = 18A
VCE = 960V
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit (Figure 18)
-
21
26
ns
-
17
22
ns
-
205
240
ns
-
140
200
ns
-
0.85
1.1
mJ
Turn-On Energy (Note 5)
EON2
-
3.7
4.9
mJ
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
EOFF
RθJC
-
2.6
3.1
mJ
-
-
0.32
oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Fig. 18.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V
120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH
50
100
40
80
30
60
20
40
10
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
0
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 3Ω, L = 1mH, VCE = 960V
TC = 75oC, VGE = 15V, IDEAL DIODE
100
50
30
VCE = 960V, RG = 3Ω, TJ = 125oC
300
25
250
ISC
20
200
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.32oC/W, SEE NOTES
TC
75oC
75oC
110oC
110oC
VGE
15V
12V
15V
12V
1
5
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
15
150
tSC
10
100
5
50
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG18N120BN Rev. B
Share Link: 