HA8550C Просмотр технического описания (PDF) - Hi-Sincerity Mocroelectronics
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HA8550C Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6108
Issued Date : 1997.09.05
Revised Date : 2001.08.13
Page No. : 1/3
HA8550
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HA8550 is designed for use in 2W output amplifier of portable radios in
class B push-pull operation.
Features
• High total power dissipation (PT: 2W, TC=25°C)
• High collector current (IC: 1.5A)
• Complementary to HA8050
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................................... 1 W
Total Power Dissipation (Tc=25°C) ................................................................................................... 2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage................................................................................................. -25 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ..................................................................................................................... -1.5 A
IB Base Current ............................................................................................................................ -0.5 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min.
Typ.
-40
-
-25
-
-6
-
-
-
-
-
-
-
-
-
-
-
45
-
85
-
40
-
100
-
Classification on hFE2
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
500
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
V
MHz
IC=-100uA
IC=-2mA
IE=-100uA
VCB=-35V
VEB=-6V
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-50mA, f=100MHZ
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
C
120-200
D
160-320
E
250-500
HA8550
HSMC Product Specification
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