H9435S Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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H9435S Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
• Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
gFS
Forward Transconductance
• Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
• Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS=0V, ID=-250uA
VGS=-4.5V, ID=-4.2A
VGS=-10V, ID=-5.3A
VDS=VGS, ID=-250uA
VDS=-24V, VGS=0V
VGS=±20V, VDS=0V
VDS=-15V, ID=-5.3A
VDS=-15V, ID=-5.3A, VGS=-10V
VDS=-15V, VGS=0V, f=1MHz
VDD=10V, RL=15Ω, ID=-1A,
VGEN=-10V, RG=6Ω
VGS=0V, IS=-5.3A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
Min. Typ. Max. Unit
30
-
-
V
-
82
90
mΩ
-
50
60
-1
-
-3
V
-
-
-1
uA
-
-
±100 nA
4
7
-
S
-
9.52
-
-
3.43
-
nC
-
1.71
-
- 551.57 -
- 90.96 -
PF
- 60.79 -
-
10.8
-
-
2.33
-
Ns
- 22.53 -
-
3.87
-
-
-
-1.9
A
-
-
-1.3
V
H9435S
HSMC Product Specification
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