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H11B2 Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание
производитель
H11B2 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
End of Life January-2018 - Alternative Device: CNY17
www.vishay.com
H11B1, H11B2, H11B3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Total package dissipation (LED plus detector)
Derate linearly from 25 °C
Ptot
260
mW
3.5
mW/°C
Storage temperature
Operating temperature
Lead soldering time at 260 °C
Tstg
-55 to +150
°C
Tamb
-55 to +100
°C
10
s
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Reverse current
Junction capacitance
OUTPUT
IF = 50 mA
H11B1
VF
-
1.1
1.5
V
H11B2
VF
-
1.1
1.5
V
IF = 10 mA
H11B3
VF
-
1.1
1.5
V
VR = 3 V
IR
-
-
10
μA
VF = 0 V, f = 1 MHz
Cj
-
50
-
pF
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
COUPLER
IC = 1 mA, IF = 0 mA
IE = 100μA, IF = 0 mA
IC = 100 μA, IF = 0 mA
VCE = 10 V, IF = 0 mA
BVCEO
30
BVECO
7
BVCBO
30
ICEO
-
-
-
V
-
-
V
-
-
V
-
100
nA
Saturation voltage collector-emitter
Capacitance (input to output)
IF = 1 mA, IC = 1 mA
VCEsat
-
-
1
V
CIO
-
0.5
-
pF
Note
• Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
DC current transfer ratio
H11B1 CTRDC
500
VCE = 5 V, IF = 1 mA
H11B2 CTRDC
200
H11B3 CTRDC
100
TYP.
MAX.
UNIT
%
%
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Switching times
IF = 5 mA, VCE = 10 V, RL = 100 Ω
ton
toff
TYP.
5
30
MAX.
UNIT
μs
μs
Rev. 1.8, 23-Jul-15
2
Document Number: 83609
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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