DATA SHEET
SEMICONDUCTOR
GBJ6005 THRU GBJ610
6.0A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
•Glass Passivated Die Construction
•High Case Dielectric Strength of 1500VRMS
•Low Reverse Leakage Current
•Surge Overload Rating to 170A Peak
K
•Ideal for Printed Circuit Board Applications
•Plastic Material - UL Flammability
Classification 94V-0
•UL Listed Under Recognized Component
J
Index, File Number E94661
H
•High temperature soldering : 260OC / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
I
environment substance directive request
MECHANICAL DATA
•Case: Molded Plastic
•Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity: Molded on Body
•Mounting: Through Hole for #6 Screw
•Mounting Torque: 5.0 in-lbs Maximum
•Weight: 6.6 grams (approx)
•Marking: Type Number
A
B
_
S
D
C
G EE
GBJ
Dim
Min
Max
L
A
29.70 30.30
M
B
19.70 20.30
C
17.00 18.00
D
3.80 4.20
N
E
G
7.30 7.70
9.80 10.20
P
H
2.00 2.40
I
0.90 1.10
R
J
2.30 2.70
K
3.0 X 45°
L
4.40 4.80
M
3.40 3.80
N
3.10 3.40
P
2.50 2.90
R
0.60 0.80
S
10.80 11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
GBJ
6005
GBJ
601
GBJ
602
GBJ
604
GBJ
606
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
100 200 400 600
VR
RMS Reverse Voltage
Average Forward Rectified Output Current @ TC= 110℃
VR(RMS) 35
IO
70
140 280 420
6.0
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
150
(JEDEC method)
Forward Voltage per element
@ IF = 3.0A
VFM
1.0
Peak Reverse Current
@TC = 25℃
5.0
IR
at Rated DC Blocking Voltage
@ TC = 125℃
500
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
120
Typical Junction Capacitance per Element (Note 2)
Cj
55
Typical Thermal Resistance, Junction to Case (Note 3)
R_JC
1.8
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
http://www.yeashin.com
1
GBJ
608
GBJ
Unit
610
800 1000 V
560 700 V
A
A
V
μA
A2s
pF
℃/W
℃
REV.02 20120305