FZT1147A(1997) Просмотр технического описания (PDF) - Diodes Incorporated.

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производитель

FZT1147A
(Rev.:1997)

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 - JANUARY 1997

FZT1147A

FEATURES

* VCEO = -12V

* 5 Amp Continuous Current

* 20 Amp Pulse Current

* Low Saturation Voltage

* High Gain

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at Tamb=25°C †

Operating and Storage Temperature

Range

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

IB

Ptot

Tj:Tstg

C

VALUE

-15

-12

-5

-20

-5

-500

2.5

-55 to +150

E

C

B

SOT223

UNIT

V

V

V

A

A

mA

W

°C

†The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 2 inches by 2 inches

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