FC40SA50FKP Просмотр технического описания (PDF) - Vishay Semiconductors
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FC40SA50FKP Datasheet PDF : 10 Pages
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Power MOSFET, 40 A
FC40SA50FKP
Vishay Semiconductors
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
VDD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig. 14 - For N-Channel Power MOSFETs
ORDERING INFORMATION TABLE
Device code
F C 40 S A 50 FK P
1
2
3
4
5
6
7
8
1 - Power MOSFET
2 - Generation 6.2/6.3 MOSFET silicon DBC construction
3 - Current rating (40 = 40 A)
4 - Single switch (see Circuit Configuration table)
5 - SOT-227
6 - Voltage rating (50 = 500 V)
7 - MOSFET K speed
8-
None = Standard production
P = Lead (Pb)-free
Document Number: 94542 For technical questions within your region, please contact one of the following:
Revision: 12-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
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