ES2AHM3 Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
ES2AHM3 Datasheet PDF : 5 Pages
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www.vishay.com
ES2A, ES2B, ES2C, ES2D
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
3.0
10 000
1000
TJ = 150 °C
TJ = 125 °C
2.0
TJ = 100 °C
100
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
80 90 100 110 120 130 140 150
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
1
TJ = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
60
8.3 ms Single Half Sine-Wave
50
at TL = 110 °C
40
30
20
10
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
60
TJ = 25 °C
f = 1.0 MHz
50
Vsig = 50 mVp-p
40
30
20
10
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
10
1
Mounted on 5.0 mm x 5.0 mm copper pad
0.1
0.001
0.1
10
t - Pulse Duration (s)
1000
Fig. 6 - Transient Thermal Impedance
Revision: 21-Jul-17
3
Document Number: 88587
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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