MBM29SL160BD Просмотр технического описания (PDF) - Fujitsu

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MBM29SL160BD

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT

Fujitsu 

MBM29SL160TD-10/-12/MBM29SL160BD-10/-12

s FUNCTIONAL DESCRIPTION

Read Mode

The MBM29SL160TD/BD have two control functions which must be satisfied in order to obtain data at the outputs.

CE is the power control and should be used for a device selection. OE is the output control and should be used

to gate data to the output pins if a device is selected.

Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable

access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output

enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the

addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after

power-up, it is necessary to input hardware reset or to change CE pin from “H” to “L”

Standby Mode

There are two ways to implement the standby mode on the MBM29SL160TD/BD devices, one using both the

CE and RESET pins; the other via the RESET pin only.

When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ± 0.3 V.

Under this condition the current consumed is less than 5 µA max. During Embedded Algorithm operation, VCC

active current (ICC2) is required even CE = “H”. The device can be read with standard access time (tCE) from either

of these standby modes.

When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS ± 0.3 V (CE

= “H” or “L”). Under this condition the current is consumed is less than 5 µA max. Once the RESET pin is taken

high, the device requires tRH of wake up time before outputs are valid for read access.

In the standby mode the outputs are in the high impedance state, independent of the OE input.

Automatic Sleep Mode

There is a function called automatic sleep mode to restrain power consumption during read-out of

MBM29SL160TD/BD data. This mode can be used effectively with an application requested low power

consumption such as handy terminals.

To activate this mode, MBM29SL160TD/BD automatically switch themselves to low power mode when

MBM29SL160TD/BD addresses remain stably during access fine of 150 ns. It is not necessary to control CE,

WE, and OE on the mode. Under the mode, the current consumed is typically 1 µA (CMOS Level).

During simultaneous operation, VCC active current (ICC2) is required.

Since the data are latched during this mode, the data are read-out continuously. If the addresses are changed,

the mode is canceled automatically and MBM29SL160TD/BD read-out the data for changed addresses.

Output Disable

With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins

to be in a high impedance state.

Autoselect

The autoselect mode allows the reading out of a binary code from the devices and will identify its manufacturer

and type. This mode is intended for use by programming equipment for the purpose of automatically matching

the devices to be programmed with its corresponding programming algorithm. This mode is functional over the

entire temperature range of the devices.

To activate this mode, the programming equipment must force VID (10 V to 11 V) on address pin A9. Two identifier

bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All addresses are

DON’T CARES except A0, A1, and A6 (A-1). (See Tables 4 and 5.)

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