BU2872AK Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

BU2872AK

FL tube driver

ROHM Semiconductor 

Standard ICs

BU2872AK

•Electrical characteristics (unless otherwise noted, Ta = 25°C, VDD = 5V, VSS = 0V, VDD-VEE = 30V)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Measurement circuit

Supply current

IDD

—

—

5

mA Pin 44 external 1000 pF, when oscillated

Fig.1

Input threshold voltage

VIN

1.5

—

3.5

V Pins 1 to 4, 6, 8, 9 to 13

Fig.5

Input current

IIN

—

—

10

µA Pins 1 to 4, 6, 8, 9 to 13

Fig.2

Oscillation frequency

Segment output current

Grid output current

FOSC

130

200

300

kHz Pin 44 external 1000 pF

Fig.4

IOseg

7

—

—

mA Pins 15 to 26, 28 to 31 VO = VDD – 2V ∗2

Fig.2

IOgrd

20

—

—

mA Pins 26, 28 to 37 VO = VDD – 2V ∗2

Fig.2

Off level leakage current

IOFF

—

—

10

µA Pins 15 to 26, 28 to 37 VO = VDD – VEE

Fig.2

Output pull-down resistance RD

15

31

60

kΩ Pins 15 to 26, 28 to 37

Fig.2

LED output high level voltage VOH

4.0

—

—

V Pins 39 to 42 IO = 1mA

Fig.3

LED output low level voltage VOL

—

—

1.0

V Pins 39 to 42 IO = – 10mA

Fig.3

〈Serial transfer〉

Input data hold

TSH

0.16

—

—

µs

—

—

Input data setup

TSS

0.16

—

—

µs

—

—

Output data delay

TD

—

—

0.3

µs

—

—

Input clock cycle

TSCYC

0.5

—

—

µs

—

—

Input clock "H" width

T

40

—

60

% Input clock cycle at minimum value

—

∗2 Each of the high withstanding voltage output pins, pins 26 and 28 to 31, outputs the segment output current when set to the segment output and

the grid current when set to the grid output.

•Measurement circuits

A

VEE

VDD

1000p

OSC

VSS

VEE

VDD

n = Test pin

nA

VSS

V

VEE

VDD

n = Test pin

n

V

I

VSS

Fig.1

Fig.2

Fig.3

1000p

VEE

OSC

VDD

G1

VSS

Monitor

VEE

VDD

VSS

Fig.4

Fig.5

3

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