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DTC114ECA Просмотр технического описания (PDF) - Willas Electronic Corp.

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Компоненты Описание
производитель
DTC114ECA
Willas
Willas Electronic Corp. Willas
DTC114ECA Datasheet PDF : 3 Pages
1 2 3
WILLAS
Low VF Chip S
SL12-N THRU SL14-N
Digital Transistors (Built-in Resistors)
1.0A Surface Mount Schottky Barrier
DTRCe1c1t4iEfiMe/rDsT-C21104VE-E4/0DVTC114EUA
Package outline
DTC114EKA /DTC114ECA/DTC114ESA
DIGFITeALaTtRuANrSeISsTOR (NPN)
·Equivalent Circuit
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATLUoRwEpSrofile surface mounted application in order to
SOD
Boupiltti-min izbieasboreasrisdtosrspaecnaeb.le the configuration of an inverter circuit
0.106
wLoithwouptocwonenreclotinsgs,exhtiegrnhael ifnfpicuiternescisyt.ors(see equivalent circuit)
0.091
High current capability, very low forward voltage drop.
The bias resistors consist of
High surge capability.
thin-film
resistors
with
complete
isolation
tGo uaallorwdrpinosgitifvoerboiavseinrgvooflttahegeinppurto.Ttehecytiaolsno. have the advantage of
aVlmeroystticnoympplleatesltyicelSimMinDatinpgapcakraagsietic. effects
Ultra high-speed switching.
OSnilliyctohne oenp/oitfaf cxoiandl iptiolanns aner ecdhtiopb, emseettafol rsoilpiecroantiojnu,nmcatkioinng.device design easy
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
PIN CONNENCTIONS and MARKING
MDTeC1c14hEManical data
SOT-723
DTC114EE
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-323-L1. IN
2. GND
Terminals :Plated terminals, solde3r.aObUlTe per MIL-STD-750,
MARKING:24 Method 2026
MARKING:24
Polarity : Indicated by cathode band
DMTCo1u1n4tEinUgA Position : Any
SOT-323
DTC114EKA
SOT-523
0.016(0.4) Typ.
1. IN
2. GND
3. OUT
Dimensions in inche
SOT-23-3L
Weight : Approximated 0.008 gram1. IN
2. GND
3. OUT
MARKING:24
MARKING:24
Maximum ratings (AT TA=25oC unless otherwise noted)
1. IN
2. GND
3. OUT
DTC114ECAPARAMETER
Forward rectified current
Forward surge current
MARKeIvNeGr:s2e4 current
SOT-23
DTC114ECSOA NDITIONS
TO-92S Symbol
See Fig.2
IO
1. IN8.3ms single half sine-wave superimposed o1n.GND
2. GrNaDte load (JEDEC methode)
2. OUT
IFSM
3. OUT
3. IN
VR = VRRM TJ = 25OC
IR
Thermal resistance
Diode junction capacitance
2012S-0t5orage temperature
Junction to ambient
RθJA
f=1MHz and applied 4V DC reverse voltage
CJ
C,Mar,2012
WILLAS ELECTRONIC CORP. TSTG

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