DTB113EK(2009) Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

DTB113EK
(Rev.:2009)

-500mA / -50V Digital transistors (with built-in resistors)

ROHM Semiconductor 

DTB113EK

 Electrical characteristics (Ta=25C)

Parameter

Symbol

Input voltage

VI(off)

VI(on)

Output voltage

VO(on)

Input current

II

Output current

IO(off)

DC current gain

GI

Input resistance

R1

Resistance ratio

R2/R1

Transition frequency

fT ∗

∗ Characteristics of built-in transistor

Min.

−

−3

−

−

−

33

0.7

0.8

−

Typ.

−

−

−0.1

−

−

−

1

1

200

Max.

−0.5

−

−0.3

−7.2

−0.5

−

1.3

1.2

−

Unit

V

V

V

mA

μA

−

kΩ

−

MHz

Conditions

VCC= −5V, IO= −100μA

VO= −0.3V, IO= −20mA

IO/II= −50mA/−2.5mA

VI= −5V

VCC= −50V, VI= 0V

VO= −5V, IO= −50mA

−

−

VCE= −10V, IE= 50mA, f= 100MHz

 Electrical characteristic curves

-100

VO= −0.3V

-50

-20

-10

-5

-2

-1

-500m

Ta=−40 C

25 C

100 C

-200m

-100m

-500μ -1m -2m -5m -10m -20m -50m-100m-200m -500m

OUTPUT CURRENT : IO ( A)

Fig.1 Input voltage vs. output current

(ON characteristics)

-10m

-5m

-2m

-1m

-500μ

Ta=100 C

25 C

−40 C

VCC= −5V

-200μ

-100μ

-50μ

-20μ

-10μ

-5μ

-2μ

-1μ

0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0

INPUT VOLTAGE : VI (off) (V)

Fig.2 Output current vs. input voltage

(OFF characteristics)

-1

-500m

-200m

-100m

-50m

Ta=100 C

25 C

−40 C

lO/lI=20

-20m

-10m

-5m

-2m

-1m

-500μ -1m -2m -5m -10m -20m -50m-100m-200m -500m

OUTPUT CURRENT : IO (A)

Fig.4 Output voltage vs. output

current

Data Sheet

1k

VO= −5V

500

200

100

Ta=100 C

50

25 C

−40 C

20

10

5

2

1

-500μ -1m -2m -5m -10m -20m -50m-100m-200m -500m

OUTPUT CURRENT : IO (A)

Fig.3 DC current gain vs. output

current

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.B

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