DTA114TE Просмотр технического описания (PDF) - Weitron Technology

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DTA114TE

Bias Resistor Transistor PNP Silicon

Weitron Technology 

DTA114EE Series

WEITRON

TYPICAL ELECTRICAL CHARACTERISTICS − DTA123EET1

1

IC/BI = 10

1000

0.1

75°C

100

−25°C

25°C

0.01

10

75°C

TA = −25°C

25°C

VCE = 10 V

0.001

1

0

5

10

15

20

25

30

1

IC, COLLECTOR CURRENT (mA)

Figure 8. VCE(sat) versus IC

10

100

IC, COLLECTOR CURRENT (mA)

Figure 9. DC Current Gain

12

f = 1 MHz

10

lE = 0 V

TA = 2°5C

8

6

4

2

0

0 5 10 15 20 25 30 35 40 45 50

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 10. Output Capacitance

100

10 75°C

1

25°C

0.1

TA = −25°C

0.01

VO = 5 V

0.001

01

23 45 67 8

Vin, INPUT VOLTAGE (VOLTS)

9 10

Figure 11. Output Current versus Input Voltage

10

WEITRON

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TA = −25°C

1 75°C

25°C

VO = 0.2 V

0.1

0

5

10

15

20

25

IC, COLLECTOR CURRENT (mA)

Figure 12. Input Voltage versus Output Current

7/13

12-Jun-06

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