DTA114ECA Просмотр технического описания (PDF) - Willas Electronic Corp.
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DTA114ECA Datasheet PDF : 2 Pages
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WILLAS
FM120-M+
DTA114ECATHRU
1.0PANSUPRFDACigE iMtOaUlNTTrSaCnHOsTiTsKtYoBrARRIER RECTIFIERS -20V- 200V
FM1200-M+
Features
SOD-123+ PACKAGE
Typical CharactePraciskatgice soutline
• Batch process dOeNsCighna,reacxtceerilsletinctspower dissipation offers
-100 better reverse leakage current and thermal resistance.
-10
• Low profile surface mounted application inVOo=-r0d.3eVr to
OFF Characteristics
SOD-123H
Pb Free Product
optimize board space.
-30 • Low power loss, high efficiency.
-3
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
-10 • High surge capability.
-1
• Guardring for overvoltage protection.
• Ultra high-speed switching.
-3 • Silicon epitaxial planar chip, metTaal=s25il℃icon junction.
-0.3
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Ta=100℃
-1
-0.1
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ta=100℃
Ta=25℃
0.071(1.8)
0.056(1.4)
-0.3 Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• -0.1
-0.1
C
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d
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ti
c
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-
1
2
3-1H0
-30
-100
,
• Terminals :POlUaTtePUdTtCeUrmRRinENaTls,IOso(lmdAe)rable per MIL-STD-750
-0.03
-0.01
-0.0
0.03-10(.40.8) Typ. -0.8
-1.2
INPUT VOLTAGE VI(OFF) (V)
0.040(1.0)
0.024(0.6)
VCC=-5V
-1.6
0.031(0-2.8.0) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting PositionG: AI n—y — IO
1000
-1000
• Weight : Approximated 0.011 gram
VO=-5V
Dimensions in inches and (millimeters)
VO(ON) —— IO
IO/II=20
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
-300
Sing1le00phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
30
Marking Code
RATTINa=G10S0℃
Ta=25℃
Maximum Recurrent Peak Reverse Voltage
10
Maximum RMS Voltage
Maximum DC Blocking Voltage
3
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-1-0M0 H FM140-MH FM150-MH FM160-MH FTMa=118000-℃MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
18 Ta=251℃0
80
100
115 120
150
200
VRMS
14
21
28
35
42
-30
VDC
20
30
40
50
60
56
70
105
140
80
100
150
200
IO
1.0
Peak Fo1rward Surge Current 8.3 ms single half sine-wave
-0.1
-0.3
-1
-3
-10
-30IFSM
-100
superimposed on rated load (JEDEC method)
OUTPUT CURRENT IO (mA)
Typical Thermal Resistance (Note 2)
RΘJA
-10
-1
-3
-3100
-30
-100
OUTPUT CURRENT IO (mA)
40
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature Range
Storag1e2 Temperature Range CO —— VR
CHARACTERISTICS
Maxim1u0m Forward Voltage at 1.0A DC
TJ
TSTG
-55 to +125
400
PD- 65—t—o +1T7a5
-55 to +150
f=1MHz
SYMTaB=2O5L℃FM120-MH FM1303-5M0H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
300
0.5
m
Rated D8 C Blocking Voltage
@T A=125℃
10
250
NOTES:
1- Meas6ured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
4
DTA114ECA
200
150
100
2
50
0
0
4
8
12
16
20
2012-06
REVERSE BIAS VOLTAGE VR (V)
2012-0
0
0
25
50
75
100
125
150
AMBIENT TEMPERWATUILRELATa S(℃E) LECTRONIC CORP
WILLAS ELECTRONIC CORP.
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