MMFT108T1 Просмотр технического описания (PDF) - Motorola => Freescale

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MMFT108T1

TMOS FET TRANSISTOR N-CHANNEL - ENHANCEMENT

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Field Effect Transistor

N–Channel Enhancement–Mode

Logic Level SOT–223

Order this document

by MMFT108T1/D

®

2, 4 DRAIN

1

GATE

3 SOURCE

MMFT108T1

TMOS FET

TRANSISTOR

N–CHANNEL —

ENHANCEMENT

4

1

2

3

CASE 318E–04, STYLE 3

SOT–223 (TO–261AA)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain – to–Source Voltage

Gate–to–Source Voltage — Continuous

Drain Current — Continuous

Total Power Dissipation

@ TA = 25°C

Derate above 25°C

VDSS

VGS

ID

PD

200

Volts

±20

Volts

250

mAdc

0.8

Watts

6.4

mW/°C

Operating and Storage Temperature Range

DEVICE MARKING

TJ, Tstg – 65 to +150

°C

MT108

THERMAL CHARACTERISTICS

Thermal Resistance — Junction–to–Ambient (1)

Maximum Temperature for Soldering Purposes

Maximum Time in Solder Bath

RθJA

156

°C/W

TL

260

°C

10

Sec

1. Device mounted on FR4 glass epoxy printed circuit using minimum recommended foot print.

TMOS is a registered trademark of Motorola, Inc.

©MMoototorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data

1

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