DG411L Просмотр технического описания (PDF) - Vishay Semiconductors
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DG411L Datasheet PDF : 11 Pages
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DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
50
80
40
VCC = 2.7 V
60
30
V+ = 5 V
V- = 0 V
A
B
C
40
VCC = 4.5 V
20
VCC = 12 V
0
0
3
6
9
12
Drain Voltage (V)
rDS(on) vs. Drain Voltage (Single Supply)
D
20
A = 125 °C
E
B = 85 °C
10
C = 25 °C
D = - 40 °C
E = - 55 °C
0
0
1
2
3
4
5
Drain Voltage (V)
rDS(on) vs. Drain Voltage and Temperature
(Single Supply)
35
V± = ± 5 V
28
0.30
V+ = 5 V
0.25 V- = 0 V
21
14
A = 125 °C
7 B = 85 °C
C = 25 °C
D = - 40 °C
E = - 55 °C
0
-5
-3
-1
1
3
5
Drain Voltage (V)
rDS(on) vs. Drain Voltage and Temperature
(Dual Supply)
30
V+ = 5 V
20
V- = - 5 V
10
ID(on)
0
IS(off)
- 10
ID(off)
0.20
0.15
0.10
0.05
0.00
- 50 - 25 0
25 50 75 100 125 150
Temperature (°C)
Supply Current vs. Temperature
50
40
tON
30
20
tOFF
- 20
10
- 30
-5
-3
-1
1
3
5
VD or VS – Drain-Source Voltage
Leakage Current vs. Analog Voltage (Dual Supply)
0
0
3
6
9
12
15
V+ – Positive Supply Voltage (V)
Switching Time vs. Single Supply
Document Number: 71397
S-71241–Rev. E, 25-Jun-07
www.vishay.com
7
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