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DCR806SG28 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
Номер в каталоге
Компоненты Описание
производитель
DCR806SG28
Phase Control Thyristor
Shenzhen Luguang Electronic Technology Co., Ltd
DCR806SG28 Datasheet PDF : 9 Pages
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
Gate trigger voltage
V
GD
Gate non-trigger voltage
I
GT
Gate trigger current
I
GD
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At V
DRM,
T
case
= 125°C
V
DRM
= 5V, T
case
= 25°C
V
DRM
= 5V, T
case
= 25°C
DCR960G26
Max. Units
1.5
V
TBD
V
250 mA
TBD mA
CURVES
3000
2000
25°C min
25°C max
125°C min
125°C max
1000
0
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D. I
T
Where
A = 0.404415
B = 0.080354
C = 0.000415
D = 0.003401
these values are valid for T
j
= 125°C for I
T
50A to 3000A
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