DCR806SG28 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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производитель

DCR806SG28

Phase Control Thyristor

Shenzhen Luguang Electronic Technology Co., Ltd 

DCR960G26

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min. Max. Units

IRRM/IDRM Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125°C

dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open

dI/dt Rate of rise of on-state current

From 67% VDRM to 2x IT(AV) Repetitive 50Hz

Gate source 30V, 10 ,

Non-repetitive

tr < 0.5µs, Tj = 125°C

VT(TO) Threshold voltage – Low level

100A to 500A at Tcase = 125°C

Threshold voltage – High level

500A to 3000A at Tcase = 125°C

rT

On-state slope resistance – Low level

100A to 500A at Tcase = 125°C

On-state slope resistance – High level

500A to 3000A at Tcase = 125°C

tgd

Delay time

VD = 67% VDRM, gate source 30V, 10

tr = 0.5µs, Tj = 25°C

tq

Turn-off time

Tj = 125°C, VR = 200V, dI/dt = 5A/µs,

dVDR/dt = 20V/µs linear

QS

Stored charge

IT = 2000A, Tj = 125°C, dI/dt = 5A/µs,

IL

Latching current

Tj = 25°C, VD = 5V

-

-

-

-

-

-

-

-

TBD

150

700

-

50

1500

250

500

mA

V/µs

A/µs

A/µs

0.8

V

0.95

V

0.7556 m

0.51

m

TBD

µs

350

µs

1500

µC

3

A

IH

Holding current

Tj = 25°C, RG-K = , ITM = 500A, IT = 5A

-

300

mA

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