D45C7 Просмотр технического описания (PDF) - Inchange Semiconductor

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D45C7

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

D45C7

DESCRIPTION

·Low Saturation Voltage

·Good Linearity of hFE

·Fast Switching Speeds

·Complement to Type D44C7

APPLICATIONS

·Designed for various specific and general purpose application

such as: output and driver stages of amplifiers operating at

frequencies from DC to greater than 1.0MHz series, shunt

and switching regulators; low and high frequency inverters/

converters and many others.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-Peak

-6

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-1

A

30

W

150

℃

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

4.2 ℃/W

isc Website：www.iscsemi.cn

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