D44VH1 Просмотр технического описания (PDF) - Inchange Semiconductor
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D44VH1 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44VH Series
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
D44VH 1
30
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
D44VH 4
D44VH 7
IC= 25mA ;IB=B 0
45
V
60
D44VH 10
80
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4A
VCE(sat)-2
VBE(sat)
ICEV
IEBO
Collector-Emitter Saturation Voltage IC= 15A ;IB= 3A;TC=100℃
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 8A ;IB= 0.4A
IC= 8A ;IB= 0.4A;TC=100℃
VCE=RatedVCE;VBE(off)=4V
VCE=RatedVCE;VBE(off)=4V;TC=100℃
Emitter Cutoff Current
VEB= 7V; IC= 0
0.4
V
0.8
V
1.2
1.1
V
10
100
μA
10 μA
hFE-1
DC Current Gain
IC= 2A ; VCE= 1V
35
hFE-2
DC Current Gain
IC= 4A ; VCE= 1V
20
COB
Output Capacitance
IE= 0;VCB= 10V,ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A;VCE= 10V;ftest= 20MHz
Switching Times
120
pF
50
MHz
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 8A; IB1= -IB2= 0.8A
VCC= 20V
50
ns
250
ns
700
ns
90
ns
isc Website：www.iscsemi.cn
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