CR03AM-8 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CR03AM-8 Datasheet PDF : 5 Pages
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MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
0.5
120°
90°
60°
θ = 30°
180°
0.4
0.3
0.2
0.1
0
0
θθ
360°
RESISTIVE LOADS
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
0.5
180° 270°
120°
90°
DC
0.4
60°
θ = 30°
0.3
0.2
0.1
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
RGK = 1kΩ
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
140
θθ
120
360°
100
RESISTIVE LOADS
NATURAL
80
CONVECTION
60
40
20
θ = 30° 60° 90° 120° 180°
0
0
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
NATURAL
140
CONVECTION
θ
120
360°
θ = 30°
RESISTIVE,
100
60°
INDUCTIVE
80
90° LOADS
120°
180°
60
270°
DC
40
20
0
0
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
160
TYPICAL EXAMPLE
Tj = 110°C
140
120
100
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
Feb.1999
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