CR03AM Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CR03AM Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS
102
7
5
3
2
PGM = 0.5W
101
VFGM = 6V
7
5
PG(AV) = 0.1W
3
2 VGT = 0.8V
100 (Tj = 25°C)
7
5
IGT = 100µA
3
(Tj = 25°C)
2
10–1
7
5
VGD = 0.2V
IFGM = 0.3A
3
2
10–2
5 710–12 3 5 71002 3 5 71012 3 5 71022 3 5
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
0.9
0.8
DISTRIBUTION
0.7
0.6
0.5
0.4
0.3
0.2
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,TY,,,,,,IPGI,,,,,,TC(A2,,,,,,L5°EC,,,,,,X)A=,,,,,,M3P5LµEA
0.1
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
0.5
180°
120°
0.4
90°
60°
θ = 30°
0.3
0.2
0.1
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
180
160
140
120
100
80
60
40
20
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
NATURAL
60
CONVECTION
40
20
θ = 30° 90° 180°
60° 120°
0
0
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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