CR03AM-8 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CR03AM-8 Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Min.
IRRM
Repetitive peak reverse current
Tj=110°C, VRRM applied
—
IDRM
Repetitive peak off-state current
Tj=110°C, VDRM applied, RGK=1kΩ
—
VTM
On-state voltage
Ta=25°C, ITM=4A, instantaneous value
—
VGT
Gate trigger voltage
Tj=25°C, VD=6V, IT=0.1A V3
—
VGD
Gate non-trigger voltage
Tj=110°C, VD=1/2VDRM, RGK=1kΩ
0.2
IGT
Gate trigger current
Tj=25°C, VD=6V, IT=0.1A V3
1
IH
Holding current
Tj=25°C, VD=12V, RGK=1kΩ
—
Rth (j-a)
Thermal resistance
Junction to ambient
—
V2. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
Limits
Typ.
—
—
—
—
—
—
1.5
—
Max.
0.1
0.1
1.8
0.8
—
100 V 2
3
180
Unit
mA
mA
V
V
V
µA
mA
°C/ W
V3. IGT, VGT measurement circuit.
A1
IGS IGT
TUT
A3 A2
3V
DC
RGK
1
V1
2
1kΩ
VGT
SWITCH
60Ω
6V
DC
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
101
7
Ta = 25°C
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
20
18
16
14
12
10
8
6
4
2
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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