CR02AM Просмотр технического описания (PDF) - Mitsumi
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CR02AM Datasheet PDF : 5 Pages
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BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
120
TYPICAL EXAMPLE
Tj = 125°C
100
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
Tj = 25°C
IH (25°C)=1mA
3
2
IGT (25°C)=25µA
101
7
5
DISTRIBUTION TYPICAL
3
EXAMPLE
2
100
7
5
3
2
10–1
–60–40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
100
80
60
#2
40
#1
TYPICAL EXAMPLE
20 # 1 IGT (25°C)=10µA
# 2 IGT (25°C)=66µA
Tj = 125°C, RGK = 1kΩ
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
400
# 1 13µA 1.6mA
# 2 59µA 1.8mA
#1
300
#2
200
100
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
4
3
#1
#2
IGT (25°C)
# 1 10µA
# 2 66µA
2
102
7
5
4
3
2
Tj = 25°C
101
100 2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Sep.2000
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