CP305(2002) Просмотр технического описания (PDF) - Central Semiconductor
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CP305 Datasheet PDF : 2 Pages
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PROCESS CP305
Small Signal Transistor
NPN - High Current Transistor Chip
CentralTM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
31 x 31 MILS
9.0 MILS
5.9 x 11.8 MILS
6.5 x 13.8 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
11,300
PRINCIPAL DEVICE TYPES
2N3019
CMPT3019
CXT3019
CZT3019
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
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