CGY50 Просмотр технического описания (PDF) - Siemens AG

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CGY50

GaAs MMIC

Siemens AG 

GaAs MMIC

CGY 50

________________________________________________________________________________________________________

Datasheet

* Single-stage monolithic microwave IC ( MMIC-

amplifier )

* Cascadable 50 Ω gain block

* Application range: 100 MHz to 3 GHz

* IP3 30 dBm typ. @ 1.8 GHz

* Gain 8.5 dB typ. @ 1.8 GHz

* Low noise figure: 3.0 dB typ @ 1.8 GHz

* Gain control dynamic range 20 dB

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking

CGY 50 G2

Ordering code

(tape and reel)

Q68000-A8370

Circuit diagram

Pin Configuration

2

OUT/D

4

IN/G

typ. 4kΩ

1, 3 S

Package 1)

SOT-143

Maximum ratings

Drain-voltage

Peak drain-voltage

Current control gate voltage

Drain-gate voltage

Input power 2)

Channel temperature

Storage temperature range

Total power dissipation (TS < 82°C) 3)

Symbol

VD

VDP

VG

VDG

PIN

TCh

Tstg

Ptot

Value

5.5

7.5

-3 ... 0

7.5

16

150

-40...+150

400

Unit

V

V

V

V

dBm

°C

°C

mW

Thermal resistance

Channel-soldering point 3)

RthChS

<170

K/W

Note: exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is

required to protect the electrostatic sensitive MMIC against degradation due to excess current spikes. Proper

ground connection of leads 1 and 3 ( with minimum inductance ) is required to achieve the guaranteed RF

performance, stable operating conditions and adequate tuning.

1) Dimensions see chapter Package Outlines

2) See application circuit.

3) TS is measured on the source 1 lead at the soldering point to the PCB.

Siemens Aktiengesellschaft

pg. 1/5

11.01.1996

HL EH PD 21

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