CFY30(1994) Просмотр технического описания (PDF) - Siemens AG
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производитель
CFY30 Datasheet PDF : 10 Pages
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CFY 30
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Drain-source saturation current
VDS = 3.5 V, VGS = 0
Pinch-off voltage
ID = 1 mA, VDS = 3.5 V
Transconductance
ID = 15 mA, VDS = 3.5 V
Gate leakage current
ID = 15 mA, VDS = 3.5 V
Noise figure
ID = 15 mA, VDS = 3.5 V, f = 4 GHz
f = 6 GHz
Associated gain
ID = 15 mA, VDS = 3.5 V, f = 4 GHz
f = 6 GHz
Maximum available gain
ID = 15 mA, VDS = 3.5 V, f = 6 GHz
Maximum stable gain
ID = 15 mA, VDS = 3.5 V, f = 4 GHz
Power output at 1 dB compression
ID = 30 mA, VDS = 4 V, f = 6 GHz
Symbol
min.
IDSS
20
Values
typ. max.
50 80
Unit
mA
VP
– 0.5 – 1.3 – 4.0 V
gm
20
30
–
mS
IG
–
0.1 2.0 µA
F
–
–
Ga
10
–
MAG –
dB
1.4 1.6
2.0 –
11.5 –
8.9 –
11.2 –
MSG –
14.4 –
P1dB
–
16 –
dBm
Common Source Noise Parameters
f
Fmin
Ga
Γopt
RN
GHz
dB
dB
MAG ANG Ω
ID = 15 mA, VDS = 3.5 V, Z0 = 50 Ω
2
1.0
15.5
0.72
27 49
4
1.4
11.5
0.64
61 29
6
2.0
8.9
0.46
101 19
8
2.5
7.1
0.31
153 9
10
3.0
5.8
0.34
–133 14
12
3.5
5.0
0.41
– 93 28
N
F50 Ω
G (F50Ω)
–
dB
dB
0.17
2.9
10.0
0.17
2.7
9.3
0.30
2.8
7.5
0.31
2.8
6.4
0.38
3.4
4.2
0.42
4.1
2.9
Semiconductor Group
2
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