CFB0303 Просмотр технического описания (PDF) - Unspecified
Номер в каталоге
Компоненты Описание
производитель
CFB0303 Datasheet PDF : 2 Pages
| |||
CFB0303
Advanced Product Information
June 2002
(1 of 2)
Features
❏ Low-Noise Figure from 0.8 to 2.0 GHz
❏ High Gain
❏ High Intercept Point
❏ Highly Stable
❏ Easily Matched to 50Ω
❏ 70 mil Package
❏ PHEMT Material
Applications
❏ Cellular Base Stations
❏ PCS Base Stations
❏ Industrial Data Networks
High Dynamic Range
Low-Noise GaAs FET
Description
Celeritek’s CFB0303 is a high performance GaAs
PHEMT with 600 µm gate width and 0.25 µm gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
Electrical Specifications (TA = 25°C, 2 GHz)
Parameters
Conditions
Vd = 4V, Id = 75 mA
Noise Figure 2
Associated Gain 2
Pout 1, 3
IP3 3
Id 3
@ Noise Figure
P-1
+5 dBm POUT/Tone
@ P-1
Transconductance
Saturated Drain Current
Pinchoff Voltages
Thermal Resistance
Vds = 4 V, Vgs = 0 V
Vds = 4 V, Vgs = 0 V
Vds = 4 V, Ids = 1 mA
@ Tcase = 150°C liquid crystal test
Notes: 1. @ Tcase = 25°C. Derate 5 mW/°C for Tcase >25°C.
2. Input matched for low noise.
3. Matched for power transfer.
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0303 is in an indus-
try-standard 70 mil package. It is surface mountable and
available in tape and reel.
Min
Typ
Max
0.5
0.6
19.0
20.0
22.7
20.0
21.0
22.0
32
34
83
350
80
140
240
-0.3
200
Units
dB
dB
dBm
dBm
mA
mho
mA
V
°C/W
Typical Scattering Parameters (TA = 25°C, VDS = 4 V, IDS = 75 mA)
Frequency
(GHz)
S11
Mag
Ang
S21
Mag (dB)
Ang
S12
MAG (dB)
ANG
0.5
0.98
-24
8.47
160
0.02
77
1.0
0.94
-44
8.20
147
0.03
69
2.0
0.85
-80
7.30
118
0.05
51
3.0
0.76
-112
6.30
94
0.07
37
4.0
0.70
-134
5.60
74
0.08
29
5.0
0.64
-154
5.13
54
0.09
19
S22
MAG
ANG
0.33
-9
0.32
-15
0.27
-36
0.25
-50
0.24
-55
0.23
-61
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
Share Link: 