CF750 Просмотр технического описания (PDF) - Siemens AG
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CF750 Datasheet PDF : 6 Pages
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GaAs MMIC
CF 750
________________________________________________________________________________________________________
Typical Common Source S-Parameters
Bias conditions: VDGND= 3.8 V, ID = 2 mA
Source-Pad RF-grounded by capacitor with low inductance (< 0.5nH ) !
f
GHz
0.01
0.1
0.25
0.5
0.75
1.00
1.25
1.5
1.75
2.00
2.25
2.5
2.75
3.00
S11
MAG ANG
0.97
-1
0.97
-3
0.96
-8
0.94
-16
0.91
-26
0.87
-34
0.83
-42
0.87
-49
0.72
-57
0.66
-65
0.61
-73
0.56
-81
0.52
-87
0.49
-93
S21
MAG ANG
1.78
179
1.78
175
1.76
169
1.73
155
1.70
141
1.68
127
1.65
118
1.62
108
1.59
95
1.54
82
1.51
71
1.47
60
1.45
52
1.42
45
S12
MAG
ANG
0.002
89
0.008
84
0.015
78
0.027
75
0.039
71
0.046
64
0.052
62
0.061
57
0.066
55
0.069
52
0.071
54
0.073
60
0.074
63
0.075
66
S22
MAG ANG
0.98
-1
0.98
-2
0.97
-6
0.95
-11
0.93
-16
0.91
-22
0.89
-26
0.88
-30
0.87
-34
0.86
-38
0.85
-43
0.84
-48
0.83
-52
0.82
-56
Typical Common Source Noise Parameters
Bias conditions: VD= 3 V, ID= 2 mA, Z = 50Ω
f
Γopt ( F )
Rn
MHz
MAG
ANG
Ω
200
0.80
5
75
450
0.79
12
60
800
0.68
23
51
900
0.63
26
49
1200
0.58
34
45
1500
0.54
42
40
1800
0.52
51
36
1900
0.50
53
35
Rn/50Ω
-
1.50
1.20
1.02
0.98
0.90
0.80
0.72
0.70
F min
dB
1.2
1.2
1.5
1.6
1.7
1.8
1.9
1.9
Siemens Aktiengesellschaft
pg. 4/6
12.01.96
HL EH PD 21
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