BZW04-136 Просмотр технического описания (PDF) - MDE Semiconductor
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BZW04-136 Datasheet PDF : 4 Pages
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MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
RATINGS AND CHARACTERISTIC CURVES BZW04 SERIES
Ratings and
Characteristic Curves(TA=25℃ unless otherwise noted)
Fig. 1 - Peak Pulse Power
100
Non-repetitive Pulse
Waveform shown in
Fig. 3
10
Fig.2 - Pulse Derating Curve
100
75
50
1
25
0.1
0.1µ
150
100
50
1.0µ
10µs
100µs 1.0m
10m
td - Pulse Width
Fig.3 - Pulse Waveform
tr = 10µsec.
TJ = 25°C
Peak Value IPPM
Pulse Width(td)is defined
Half Value-
IPPM
2
as the point where the
peak current decays to
50% of IPPM
10/1000µsec.Waveform
as defined by R.E.A.
td
00
1.0
2.03.
3 4.0 4.0
t - Time(ms)
Fig.5 - steady State Power Derating
1.00
L=0.375" (9.5mm)
0.88
Lead Lengths
60 HZ Resistive or
Inductive Load
0.75
0.63
0.50
0.38
1.6x1.6x.040"
0.25
(40x40x1mm)
Copper Heat Sinks
0.13
0.000
0
0.2
0.4
0.6
0.8
1
1.2
TL - Lead Temperature
Fig.7 - Typical Reverse Leakage Characteristics
100
Measured at Devices
10
Stand-off Voltage,VWM
TA = 25°C
1
0.1
0
0
25
50
75
100 125 150 175 200
TA - Ambient Temperature (°C)
Fig.4 - Typ.Junction Capacitance Uni-Directional
10000
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
1000
Measured at Zero
Bias
100
1000 10
Measured at
Stand-Off
Voltage, VWM
1.0
100 200
VWM - Reverse Stand-Off Voltage (V)
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
200
TJ = TJ max.
8.3ms Single Half Sine-
100
Wave
50
10
0
100
0.2
0.4
0.6
0.8
1
1.2
Number of Cycles at 60 Hz
Fig. 8 - Typ.Transient Thermal Impedance
10
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V(BR) - Breakdown Voltage (V)
1
0
0.2
0.4
0.6
0.8
1
1.2
tp-Pulse Duration (sec)
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