BZD27C9V1P Просмотр технического описания (PDF) - Vaishali Semiconductor
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Компоненты Описание
производитель
BZD27C9V1P Datasheet PDF : 7 Pages
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BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10.00
Typ. VF
1.00
Max. VF
0.10
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
17411
VF – Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
160
140
120
100
80
60
40
20
0
0
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25 50 75 100 125 150 175 200
VZnom – Zener Voltage ( V )
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
10000
C5V1P
C6V8P
C12P
C18P
1000
100
C27P
C51P
C200P
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
17412
VR – Reverse Voltage (V)
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
IRSM
(%)
100
90
50
t1 = 10 µs
t2 = 1000 µ s
10
t1
t
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t2
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
3.0
tie point temperature
2.5
2.0
1.5
1.0 ambient temperature
0.5
0.0
0
25 50 75 100 125 150
17413
Tamb – Ambient Temperature ( qC )
Figure 3. Power Dissipation vs. Ambient Temperature
www.vishay.com
4
Document Number 85810
Rev. 1.8, 13-Apr-05
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