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BYW98-200 Просмотр технического описания (PDF) - STMicroelectronics

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BYW98-200 Datasheet PDF : 5 Pages
1 2 3 4 5
BYW98-200
Fig. 7: Reverse recovery time versus dIF/dt.
Fig. 8: Peak reverse recovery current versus
dIF/dt.
trr(ns)
100
80
60
40
20
0
1
Tj=100°C
Tj=25°C
dIF/dt(A/µs)
10
IF=3A
90% confidence
Tj=100°C
100
IRM(A)
2.5
2.0
IF=3A
90% confidence
Tj=100°C
1.5
1.0
0.5
0.0
1
Tj=100°C
Tj=25°C
dIF/dt(A/µs)
10
100
Fig. 9: Dynamic parameters versus junction
temperature.
250
%
IF=3A
dIF/dt=50A/µs
VR=30V
200
150
100
25
50
Qrr
IRM
trr
Tj(°C)
75
100
125
150
4/5

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