BUR50 Просмотр технического описания (PDF) - Semelab - > TT Electronics plc
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BUR50 Datasheet PDF : 3 Pages
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SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUR50
• High Pulse Power, Fast Switching.
• Hermetic Metal TO3 Package.
• Ideally suited for Motor Control
and Power Switching Circuits
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
200V
VCEO
Collector – Emitter Voltage
125V
VEBO
Emitter – Base Voltage
10V
IC
Continuous Collector Current
70A
ICM
Peak Collector Current
tp = 10ms
100A
IB
Base Current
20A
PD
Total Power Dissipation at TC = 25°C
350W
Derate Above 25°C
2W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
0.5 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 6522
Website: http://www.semelab-tt.com
Issue 2
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